Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V x s

Marcia M Payne; Sean R Parkin; John E Anthony; Chung-Chen Kuo; Thomas N Jackson

doi:10.1021/ja042353u

Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V x s

J Am Chem Soc. 2005 Apr 13;127(14):4986-7. doi: 10.1021/ja042353u.

Authors

Marcia M Payne¹, Sean R Parkin, John E Anthony, Chung-Chen Kuo, Thomas N Jackson

Affiliation

¹ Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055, USA.

PMID: 15810810
DOI: 10.1021/ja042353u

Abstract

We present the device parameters for organic field-effect transistors fabricated from solution-deposited films of functionalized pentacene and anthradithiophenes. These materials are easily prepared in one or two steps from commercially available starting materials and are purified by simple recrystallization. For a solution-deposited film of functionalized pentacene, hole mobility of 0.17 cm2/V.s was measured. The functionalized anthradithiophenes showed behavior strongly dependent on the substituents, with hole mobilities as high as 1.0 cm2/V.s.