McClellan C - Search Results

1

Field effect transistors with current saturation and voltage gain in ultrathin ReS2.

Corbet CM, McClellan C, Rai A, Sonde SS, Tutuc E, Banerjee SK. Corbet CM, et al. Among authors: mcclellan c. ACS Nano. 2015 Jan 27;9(1):363-70. doi: 10.1021/nn505354a. Epub 2014 Dec 24. ACS Nano. 2015. PMID: 25514177

2

Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms.

Corbet CM, McClellan C, Kim K, Sonde S, Tutuc E, Banerjee SK. Corbet CM, et al. Among authors: mcclellan c. ACS Nano. 2014 Oct 28;8(10):10480-5. doi: 10.1021/nn5038509. Epub 2014 Oct 10. ACS Nano. 2014. PMID: 25259872

3

Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.

Wang CH, Incorvia JAC, McClellan CJ, Yu AC, Mleczko MJ, Pop E, Wong HP. Wang CH, et al. Among authors: mcclellan cj. Nano Lett. 2018 May 9;18(5):2822-2827. doi: 10.1021/acs.nanolett.7b05192. Epub 2018 Apr 12. Nano Lett. 2018. PMID: 29620900

4

Localized Triggering of the Insulator-Metal Transition in VO₂ Using a Single Carbon Nanotube.

Bohaichuk SM, Muñoz Rojo M, Pitner G, McClellan CJ, Lian F, Li J, Jeong J, Samant MG, Parkin SSP, Wong HP, Pop E. Bohaichuk SM, et al. ACS Nano. 2019 Oct 22;13(10):11070-11077. doi: 10.1021/acsnano.9b03397. Epub 2019 Aug 26. ACS Nano. 2019. PMID: 31393698

5

Uncovering the Effects of Metal Contacts on Monolayer MoS₂.

Schauble K, Zakhidov D, Yalon E, Deshmukh S, Grady RW, Cooley KA, McClellan CJ, Vaziri S, Passarello D, Mohney SE, Toney MF, Sood AK, Salleo A, Pop E. Schauble K, et al. ACS Nano. 2020 Nov 24;14(11):14798-14808. doi: 10.1021/acsnano.0c03515. Epub 2020 Sep 23. ACS Nano. 2020. PMID: 32905703

6

High Current Density in Monolayer MoS₂ Doped by AlO_x.

McClellan CJ, Yalon E, Smithe KKH, Suryavanshi SV, Pop E. McClellan CJ, et al. ACS Nano. 2021 Jan 26;15(1):1587-1596. doi: 10.1021/acsnano.0c09078. Epub 2021 Jan 6. ACS Nano. 2021. PMID: 33405894

7

Ultrathin Three-Monolayer Tunneling Memory Selectors.

Wang CH, Chen V, McClellan CJ, Tang A, Vaziri S, Li L, Chen ME, Pop E, Wong HP. Wang CH, et al. ACS Nano. 2021 May 25;15(5):8484-8491. doi: 10.1021/acsnano.1c00002. Epub 2021 May 4. ACS Nano. 2021. PMID: 33944559

8

Energy Dissipation in Monolayer MoS₂ Electronics.

Yalon E, McClellan CJ, Smithe KKH, Muñoz Rojo M, Xu RL, Suryavanshi SV, Gabourie AJ, Neumann CM, Xiong F, Farimani AB, Pop E. Yalon E, et al. Nano Lett. 2017 Jun 14;17(6):3429-3433. doi: 10.1021/acs.nanolett.7b00252. Epub 2017 May 2. Nano Lett. 2017. PMID: 28388845

9

Rapid Flame Synthesis of Atomically Thin MoO₃ down to Monolayer Thickness for Effective Hole Doping of WSe₂.

Cai L, McClellan CJ, Koh AL, Li H, Yalon E, Pop E, Zheng X. Cai L, et al. Nano Lett. 2017 Jun 14;17(6):3854-3861. doi: 10.1021/acs.nanolett.7b01322. Epub 2017 Jun 1. Nano Lett. 2017. PMID: 28537732

10

Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe₂ Transistors.

Barré E, Incorvia JAC, Kim SH, McClellan CJ, Pop E, Wong HP, Heinz TF. Barré E, et al. Among authors: mcclellan cj. Nano Lett. 2019 Feb 13;19(2):770-774. doi: 10.1021/acs.nanolett.8b03838. Epub 2019 Jan 2. Nano Lett. 2019. PMID: 30601667

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