First observation of the EL2 lattice defect in indium gallium arsenide grown by molecular-beam epitaxy
Phys Rev Lett
.
1992 Apr 6;68(14):2168-2171.
doi: 10.1103/PhysRevLett.68.2168.
Authors
AC Irvine
,
DW Palmer
PMID:
10045324
DOI:
10.1103/PhysRevLett.68.2168
No abstract available