Skip to main page content
Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation
, 85 (5), 1012-5

Hydrogen as a Cause of Doping in Zinc Oxide

Affiliations

Hydrogen as a Cause of Doping in Zinc Oxide

Van De Walle CG. Phys Rev Lett.

Abstract

Zinc oxide, a wide-band-gap semiconductor with many technological applications, typically exhibits n-type conductivity. The cause of this conductivity has been widely debated. A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor. This behavior is unexpected and very different from hydrogen's role in other semiconductors, in which it acts only as a compensating center and always counteracts the prevailing conductivity. These insights have important consequences for control and utilization of hydrogen in oxides in general.

Similar articles

See all similar articles

Cited by 44 PubMed Central articles

See all "Cited by" articles

LinkOut - more resources

Feedback