Room-temperature spin injection from Fe into GaAs

Phys Rev Lett. 2001 Jul 2;87(1):016601. doi: 10.1103/PhysRevLett.87.016601. Epub 2001 Jun 15.


Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.