Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique

L Dai; S F Liu; Z X Fu; L P You; J J Zhu; B X Lin; J C Zhang; G G Qin

doi:10.1063/1.1861880

Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique

J Chem Phys. 2005 Mar 8;122(10):104713. doi: 10.1063/1.1861880.

Authors

L Dai¹, S F Liu, Z X Fu, L P You, J J Zhu, B X Lin, J C Zhang, G G Qin

Affiliation

¹ School of Physics, Peking University, Beijing 100871, China.

PMID: 15836351
DOI: 10.1063/1.1861880

Abstract

GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.