We report a general synthetic method for the formation of shape-controlled CdS, CdSe and CdTe nanocrystals and mixed-semiconductor heterostructures. The crystal growth kinetics can be manipulated by changing the injection rate of the chalcogen precursor, allowing the particle shape-spherical or rodlike-to be tuned without changing the underlying chemistry. A single injection of precursor leads to isotropic spherical growth, whereas multiple injections promote epitaxial growth along the length of the c-axis. This method was extended to produce linear type I and type II semiconductor nanocrystal heterostructures.