GaN nanorod Schottky and p-n junction diodes

Nano Lett. 2006 Dec;6(12):2893-8. doi: 10.1021/nl062152j.

Abstract

Conductive atomic force microscopy has been used to characterize single GaN nanorod Schottky and p-n junction diodes. The ideality factor, reverse breakdown voltage, and the Schottky barrier height of individual nanorod diodes were compared to those from conventional thin-film diodes. Large-area contacts, enabling diodes with arrays of GaN nanorods in parallel, were also fabricated and their electrical characteristics investigated. The defect-free nature of the GaN nanorods and enhanced tunneling effects due to nanoscale contacts have been invoked to explain the electrical behavior of the nanorod diodes.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.