Skip to main page content
Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation
Review
, 7 (7), 2051-5

Gate-defined Quantum Dots in Intrinsic Silicon

Affiliations
Review

Gate-defined Quantum Dots in Intrinsic Silicon

Susan J Angus et al. Nano Lett.

Abstract

We report the fabrication and measurement of silicon quantum dots with tunable tunnel barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy is performed in both the many-electron ( approximately 100 electrons) regime and the few-electron ( approximately 10 electrons) regime. Excited states in the bias spectroscopy provide evidence of quantum confinement. These results demonstrate that depletion gates are an effective technique for defining quantum dots in silicon.

Similar articles

See all similar articles

Cited by 12 articles

See all "Cited by" articles

Publication types

LinkOut - more resources

Feedback