Enhanced spontaneous emission from InAs/GaAs quantum dots in pillar microcavities emitting at telecom wavelengths

Nicolas Chauvin; Laurent Balet; Blandine Alloing; Carl Zinoni; Lianhe Li; Andrea Fiore; Laurent Grenouillet; Philippe Gilet; Nicolas Olivier; Alexei Tchelnokov; Marlène Terrier; Jean-Michel Gérard

doi:10.1364/ol.32.002747

Enhanced spontaneous emission from InAs/GaAs quantum dots in pillar microcavities emitting at telecom wavelengths

Opt Lett. 2007 Sep 15;32(18):2747-9. doi: 10.1364/ol.32.002747.

Authors

Nicolas Chauvin¹, Laurent Balet, Blandine Alloing, Carl Zinoni, Lianhe Li, Andrea Fiore, Laurent Grenouillet, Philippe Gilet, Nicolas Olivier, Alexei Tchelnokov, Marlène Terrier, Jean-Michel Gérard

Affiliation

¹ Ecole Polytechnique Fédérale de Lausanne (EPFL), IPEQ, Station 3, CH-1015, Lausanne, Switzerland. nicolas.chauvin@epfl.ch

PMID: 17873956
DOI: 10.1364/ol.32.002747

Abstract

Optical properties of InAs/GaAs quantum dots in micropillar cavities emitting at 1.3 microm are studied by time-resolved microphotoluminescence. The Purcell effect is observed with an enhancement of the decay rate by a factor of two for quantum dots in resonance with the cavity mode.

MeSH terms

Arsenicals / chemistry*
Arsenicals / radiation effects
Computer Simulation
Gallium / chemistry*
Gallium / radiation effects
Indium / chemistry*
Indium / radiation effects
Light
Materials Testing
Models, Theoretical*
Quantum Dots*
Telecommunications

Substances

Arsenicals
Indium
gallium arsenide
Gallium
indium arsenide