Reaction of TiCl(4) or ZrI(4) with the soft, neutral o-C(6)H(4)(CH(2)EMe)(2) (E = S or Se) in anhydrous CH(2)Cl(2) (or toluene) yields the distorted octahedral chelate complexes [MX(4){o-C(6)H(4)(CH(2)EMe)(2)}]. Using Et(2)Se gives [MX(4)(Et(2)Se)(2)] (M = Zr, X = Cl or I; M = Hf, X = I). The Sn(IV) analogues, [SnCl(4){o-C(6)H(4)(CH(2)EMe)(2)}] and [SnCl(4)(Et(2)Se)(2)] were obtained similarly. These complexes have been characterised spectroscopically and analytically, and crystal structures of trans-[SnCl(4)(Et(2)Se)(2)] and some selenonium salts derived as minor by-products from the parent Group 4 complexes are described. The neutral chalcogenoether complexes have been evaluated as single source precursors to ME(2)/ME thin films via LPCVD. [TiCl(4){o-C(6)H(4)(CH(2)EMe)(2)}] leads to the deposition of air and moisture stable TiE(2) films (with no residual Cl). Coverage of the substrate is uniform with platelet growth perpendicular to the surface. The heavier Zr(IV) species do not lead to significant ZrE(2) deposition. On the other hand, LPCVD of [SnCl(4){o-C(6)H(4)(CH(2)SMe)(2)}] leads to deposition of SnS(2) at lower temperatures and SnS at higher temperatures, while [SnCl(4){o-C(6)H(4)(CH(2)SeMe)(2)}] gives rather uneven coatings of SnSe(2). The Et(2)Se derivative, [SnCl(4)(Et(2)Se)(2)] leads to uniform deposition of SnSe(2) with growth perpendicular to the substrate surface. The SnE(2)/SnE films are stable indefinitely to air and moisture. The generation of TiS(2), SnS(2) and SnS in this way are very rare examples of metal sulfide deposition from C-S bond fission within a thioether complex.