Laser produced spectrum of Si(2) molecule in the region of 540-1010 nm

K S Ojha; R Gopal

doi:10.1016/j.saa.2008.02.038

Laser produced spectrum of Si(2) molecule in the region of 540-1010 nm

Spectrochim Acta A Mol Biomol Spectrosc. 2008 Dec 1;71(3):1003-6. doi: 10.1016/j.saa.2008.02.038. Epub 2008 Mar 2.

Authors

K S Ojha¹, R Gopal

Affiliation

¹ Laser & Spectroscopy Laboratory, Department of Physics, University of Allahabad, Allahabad 211002, India. kspectra12@yahoo.co.in

PMID: 18403254
DOI: 10.1016/j.saa.2008.02.038

Abstract

The laser produced spectrum of Si(2) molecule is recorded for the first time using laser ablation technique in the region of 540-1010 nm. About 110 bands are observed in the entire spectral region and all these bands are classified into three band systems, viz. E-X, F-X and G-X of Si(2) molecule lying in the region of 814-1010 nm, 630-900 nm and 546-710 nm, respectively. All these electronic transitions take place from ground state X(3)Sigma(g)(-) state. The molecular constants of all these states have been determined.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Lasers
Models, Chemical
Photolysis
Radiochemistry
Silicon / chemistry*
Silicon / radiation effects*
Spectrophotometry
Spectrophotometry, Infrared

Substances

Silicon