Effect of water impurity in CsLiB6O10 crystals on bulk laser-induced damage threshold and transmittance in the ultraviolet region

Takahiro Kawamura; Masashi Yoshimura; Yoshiyuki Honda; Masato Nishioka; Yohei Shimizu; Yasuo Kitaoka; Yusuke Mori; Takatomo Sasaki

doi:10.1364/ao.48.001658

Effect of water impurity in CsLiB6O10 crystals on bulk laser-induced damage threshold and transmittance in the ultraviolet region

Appl Opt. 2009 Mar 20;48(9):1658-62. doi: 10.1364/ao.48.001658.

Authors

Takahiro Kawamura¹, Masashi Yoshimura, Yoshiyuki Honda, Masato Nishioka, Yohei Shimizu, Yasuo Kitaoka, Yusuke Mori, Takatomo Sasaki

Affiliation

¹ Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan. tkawamura@cryst.eei.eng.osaka-u.ac.jp

PMID: 19305462
DOI: 10.1364/ao.48.001658

Abstract

We investigate the effect of water impurity in a CsLiB(6)O(10) (CLBO) crystal on the ultraviolet properties of the bulk laser-induced damage threshold (LIDT) and transmittance. The water impurity was eliminated by heating the CLBO sample with dimensions of 5 mm x 5 mm x 10 mm at 150 degrees C in an ambient atmosphere and subsequently in a dry atmosphere. The bulk LIDT of the sample after heat treatment improved by about 1.6-fold compared with that before heat treatment.