Controlled synthesis of one-dimensional materials, such as nanowires and nanobelts, is of vital importance for achieving the desired properties and fabricating functional devices. We report a systematic investigation of the vapor transport growth of one-dimensional SnO(2) nanostructures, aiming to achieve precise morphology control. SnO(2) nanowires are obtained when SnO(2) mixed with graphite is used as the source material; adding TiO(2) into the source reliably leads to the formation of nanobelts. Ti-induced modification of crystal surface energy is proposed to be the origin of the morphology change. In addition, control of the lateral dimensions of both SnO(2) nanowires (from approximately 15 to approximately 115 nm in diameter) and nanobelts (from approximately 30 nm to approximately 2 microm in width) is achieved by adjusting the growth conditions. The physical properties of SnO(2) nanowires and nanobelts are further characterized and compared using room temperature photoluminescence, resonant Raman scattering, and field emission measurements.