We report in this communication the two-photon absorption (TPA)-induced room-temperature lasing performance of ZnO nanowires. Under femtosecond pulse-excitation at lambda = 700 nm in the infrared regime, a remarkably low threshold of 160 microJ/cm(2) was observed for the TPA-induced lasing action, which is of the same order of magnitude as that measured for the linear lasing process. Time-resolved photoluminescence characterization of two-photon pumped ZnO nanowires reveals the presence of a fast decay (3-4 ps) in the stimulated emission as compared to the slow decay (50-70 ps) for the spontaneous emission. The TPA process in ZnO nanowires was characterized with the nonlinear transmission measurement, which uncovers an enhanced TPA coefficient, about 14.7 times larger than that of bulk ZnO samples. The observed TPA enhancement in ZnO nanowires accounts for the low threshold lasing behavior, and has been attributed to the intensified optical field confined within the nanowire waveguides.