Continuous-wave operation of photonic band-edge laser near 1.55 microm on silicon wafer

Opt Express. 2007 Jun 11;15(12):7551-6. doi: 10.1364/oe.15.007551.


We report on the continuous-wave operation of a band edge laser at room temperature near 1.55 mum in an InGaAs/InP photonic crystal. A flat dispersion band-edge photonic mode is used for surface normal operation. The photonic crystal slab is integrated onto a Silicon chip by means of Au/In bonding technology, which combines two advantages, efficient heat sinking and broad band reflectivity.