Quantification of thin film crystallographic orientation using X-ray diffraction with an area detector

Jessy L Baker; Leslie H Jimison; Stefan Mannsfeld; Steven Volkman; Shong Yin; Vivek Subramanian; Alberto Salleo; A Paul Alivisatos; Michael F Toney

doi:10.1021/la904840q

Quantification of thin film crystallographic orientation using X-ray diffraction with an area detector

Langmuir. 2010 Jun 1;26(11):9146-51. doi: 10.1021/la904840q.

Authors

Jessy L Baker¹, Leslie H Jimison, Stefan Mannsfeld, Steven Volkman, Shong Yin, Vivek Subramanian, Alberto Salleo, A Paul Alivisatos, Michael F Toney

Affiliation

¹ Department of Mechanical Engineering, University of California, Berkeley, Berkeley, California 94720, USA.

PMID: 20361783
DOI: 10.1021/la904840q

Abstract

As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological and crystallographic information is needed to predict and optimize the film's electrical, optical, and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector in two sample geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of better and less expensive electronic and optoelectronic devices.