Damping of exciton Rabi rotations by acoustic phonons in optically excited InGaAs/GaAs quantum dots

Phys Rev Lett. 2010 Jan 8;104(1):017402. doi: 10.1103/PhysRevLett.104.017402. Epub 2010 Jan 8.


We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.