GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si

Nano Lett. 2010 May 12;10(5):1639-44. doi: 10.1021/nl9041774.

Abstract

We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Aluminum / chemistry*
  • Arsenicals / chemistry*
  • Crystallization / methods
  • Equipment Design
  • Equipment Failure Analysis
  • Gallium / chemistry*
  • Lighting / instrumentation*
  • Materials Testing
  • Nanostructures / chemistry*
  • Nanostructures / ultrastructure
  • Nanotechnology / instrumentation*
  • Particle Size
  • Semiconductors*
  • Silicon / chemistry*

Substances

  • Arsenicals
  • gallium arsenide
  • Gallium
  • Aluminum
  • Silicon