Direct low-temperature nanographene CVD synthesis over a dielectric insulator

ACS Nano. 2010 Jul 27;4(7):4206-10. doi: 10.1021/nn100971s.


Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nanographene and few-layer nanographene are directly formed over magnesium oxide and can be achieved at temperatures as low as 325 degrees C.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Acetylene / chemistry
  • Carbon / chemistry*
  • Electric Impedance
  • Magnesium Oxide / chemistry
  • Nanostructures / chemistry*
  • Nanotechnology / methods*
  • Spectrum Analysis, Raman
  • Temperature*
  • Volatilization


  • Magnesium Oxide
  • Carbon
  • Acetylene