Sub-10-nm nanochannels by self-sealing and self-limiting atomic layer deposition

Sung-Wook Nam; Min-Hyun Lee; Seung-Hyun Lee; Do-Joong Lee; S M Rossnagel; Ki-Bum Kim

doi:10.1021/nl100999e

Sub-10-nm nanochannels by self-sealing and self-limiting atomic layer deposition

Nano Lett. 2010 Sep 8;10(9):3324-9. doi: 10.1021/nl100999e.

Authors

Sung-Wook Nam¹, Min-Hyun Lee, Seung-Hyun Lee, Do-Joong Lee, S M Rossnagel, Ki-Bum Kim

Affiliation

¹ Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea.

PMID: 20687522
DOI: 10.1021/nl100999e

Abstract

We report on a novel fabrication method of a nanochannel ionic field effect transistor (IFET) structure with sub-10-nm dimensions. A self-sealing and self-limiting atomic layer deposition (ALD) facilitates the fabrication of lateral type nanochannels smaller than the e-beam or optical lithographic limits. Using highly conformal ALD film structures, including TiO(2), TiO(2)/TiN, and Al(2)O(3)/Ru, we have fabricated lateral sub-10-nm nanochannels with good control over channel diameter. Nanochannels surrounded by core/shell (high-k dielectric/metal) layers give rise to all-around-gating IFETs, an important functional element in an electrofluidic-based circuit system.