In the current examples of dislocation-driven nanowire growth, the screw dislocations that propagate one-dimensional growth originate from spontaneously formed highly defective "seed" crystals. Here we intentionally utilize screw dislocations from defect-rich gallium nitride (GaN) thin films to propagate dislocation-driven growth, demonstrating epitaxial growth of zinc oxide (ZnO) nanowires directly from aqueous solution. Atomic force microscopy confirms screw dislocations are present on the native GaN surface and ZnO nanowires grow directly from dislocation etch pits of heavily etched GaN surfaces. Furthermore, transmission electron microscopy confirms the existence of axial dislocations. Eshelby twist in the resulting ZnO nanowires was confirmed using bright-/dark-field imaging and twist contour analysis. These results further confirm the connection between dislocation source and nanowire growth. This may eventually lead to defect engineering strategies for rationally designed catalyst-free dislocation-driven nanowire growth for specific applications.