Solution-shear-processed quaterrylene diimide thin-film transistors prepared by pressure-assisted thermal cleavage of swallow tails

Joon Hak Oh; Wen-Ya Lee; Torsten Noe; Wen-Chang Chen; Martin Könemann; Zhenan Bao

doi:10.1021/ja110486s

Solution-shear-processed quaterrylene diimide thin-film transistors prepared by pressure-assisted thermal cleavage of swallow tails

J Am Chem Soc. 2011 Mar 30;133(12):4204-7. doi: 10.1021/ja110486s. Epub 2011 Mar 4.

Authors

Joon Hak Oh¹, Wen-Ya Lee, Torsten Noe, Wen-Chang Chen, Martin Könemann, Zhenan Bao

Affiliation

¹ Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.

PMID: 21375243
DOI: 10.1021/ja110486s

Abstract

A scalable synthesis of swallow-tailed quaterrylene diimides (STQDIs) and a method for the solution processing of sparingly soluble quaterrylene diimide (QDI) thin films are described. The pressure-assisted thermal cleavage of swallow tails yields crystalline QDI layers with electron mobility up to 0.088 cm(2) V(-1) s(-1). The developed method opens up a new route toward the solution processing of higher rylene diimides with poor solubility.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Electrons
Imides / chemical synthesis
Imides / chemistry*
Membranes, Artificial*
Pressure
Solutions
Temperature*
Transistors, Electronic*

Substances

Imides
Membranes, Artificial
Solutions