A colloidal quantum dot (QD) luminescent down-shifting (LDS) layer is used to sensitize an InGaAs short wavelength infrared photodetector to the near UV spectral band. An average improvement in the external quantum efficiency (EQE) from 1.8% to 21% across the near UV is realized using an LDS layer consisting of PbS/CdS core/shell QDs embedded in PMMA. A simple model is used to fit the experimental EQE data. A UV sensitive InGaAs imaging array is demonstrated and the effect of the LDS layer on the optical resolution is calculated. The bandwidth of the LDS detector under UV illumination is characterized and shown to be determined by the photoluminescence lifetime of the QDs.