Effect of microscopic parameters on EBSD spatial resolution

Delphic Chen; Jui-Chao Kuo; Wen-Tuan Wu

doi:10.1016/j.ultramic.2011.06.007

Effect of microscopic parameters on EBSD spatial resolution

Ultramicroscopy. 2011 Aug-Oct;111(9-10):1488-94. doi: 10.1016/j.ultramic.2011.06.007. Epub 2011 Jul 6.

Authors

Delphic Chen¹, Jui-Chao Kuo, Wen-Tuan Wu

Affiliation

¹ Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan.

PMID: 21930021
DOI: 10.1016/j.ultramic.2011.06.007

Abstract

In this study, a quantitative approach is proposed to understand the effect of the accelerating voltage and the probe current on the physical resolution of EBSD. The accelerating voltage was varied from 5 to 30kV and probe currents of 1, 10, and 40nA were selected. The lateral, longitudinal, and depth resolutions at 10kV and 1nA were 34.5, 44.7, and 46nm for copper, respectively. When the accelerating voltage was in the range of 5-20kV, the ratio of the longitudinal to the lateral resolution was below the theoretical ratio of 2.9. Considering the channeling effect, the best physical depth resolution of 38nm was achieved at 5kV and 10nA. The physical depth resolution in an EBSD measurement is much larger due to the channel effect than that obtained without considering this effect.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Computer Simulation*
Evaluation Studies as Topic
Microscopy / instrumentation
Microscopy / methods*