M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices

Nano Lett. 2011 Nov 9;11(11):4839-45. doi: 10.1021/nl202686n. Epub 2011 Oct 11.


Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11-00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire substrates. The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (∼16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Electronics*
  • Equipment Design
  • Equipment Failure Analysis
  • Gallium / chemistry*
  • Indium / chemistry*
  • Luminescent Measurements / instrumentation*
  • Nanostructures / chemistry*
  • Nanostructures / ultrastructure
  • Nanotechnology / instrumentation*
  • Particle Size


  • Indium
  • gallium nitride
  • Gallium
  • indium nitride