Group-index independent coupling to band engineered SOI photonic crystal waveguide with large slow-down factor

Somayyeh Rahimi; Amir Hosseini; Xiaochuan Xu; Harish Subbaraman; Ray T Chen

doi:10.1364/OE.19.021832

Group-index independent coupling to band engineered SOI photonic crystal waveguide with large slow-down factor

Opt Express. 2011 Oct 24;19(22):21832-41. doi: 10.1364/OE.19.021832.

Authors

Somayyeh Rahimi¹, Amir Hosseini, Xiaochuan Xu, Harish Subbaraman, Ray T Chen

Affiliation

¹ Microelectronic Research Center, Department of Electrical and Computer Engineering, University of Texas, 10100 Burnet Rd., Austin, TX 78758, USA. nrahimi@utexas.edu

PMID: 22109034
DOI: 10.1364/OE.19.021832

Abstract

Group-index independent coupling to a silicon-on-insulator (SOI) based band-engineered photonic crystal (PCW) waveguide is presented. A single hole size is used for designing both the PCW coupler and the band-engineered PCW to improve fabrication yield. Efficiency of several types of PCW couplers is numerically investigated. An on-chip integrated Fourier transform spectral interferometry device is used to experimentally determine the group-index while excluding the effect of the couplers. A low-loss, low-dispersion slow light transmission over 18 nm bandwidth under the silica light line with a group index of 26.5 is demonstrated, that corresponds to the largest slow-down factor of 0.31 ever demonstrated for a PCW with oxide bottom cladding.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.