Single-layer MoS2 phototransistors

ACS Nano. 2012 Jan 24;6(1):74-80. doi: 10.1021/nn2024557. Epub 2011 Dec 21.


A new phototransistor based on the mechanically exfoliated single-layer MoS(2) nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS(2) phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Equipment Design
  • Equipment Failure Analysis
  • Light
  • Molybdenum / chemistry*
  • Molybdenum / radiation effects
  • Nanostructures / chemistry*
  • Nanostructures / ultrastructure*
  • Oxides / chemistry*
  • Oxides / radiation effects
  • Particle Size
  • Transistors, Electronic*


  • Oxides
  • molybdenum trioxide
  • Molybdenum