Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate

Small. 2012 Apr 10;8(7):966-71. doi: 10.1002/smll.201102654. Epub 2012 Feb 15.


Atomic-layered MoS(2) is synthesized directly on SiO(2) substrates by a scalable chemical vapor deposition method. The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride (h-BN).

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.