Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics

Jongho Lee; Jian Wu; Jae Ha Ryu; Zhuangjian Liu; Matthew Meitl; Yong-Wei Zhang; Yonggang Huang; John A Rogers

doi:10.1002/smll.201102437

Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics

Small. 2012 Jun 25;8(12):1851-6. doi: 10.1002/smll.201102437. Epub 2012 Mar 29.

Authors

Jongho Lee¹, Jian Wu, Jae Ha Ryu, Zhuangjian Liu, Matthew Meitl, Yong-Wei Zhang, Yonggang Huang, John A Rogers

Affiliation

¹ Department of Mechatronics, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju, 500-712, Korea.

PMID: 22467638
DOI: 10.1002/smll.201102437

Abstract

Notched islands on a thin elastomeric substrate serve as a platform for dual-junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These designs allow for a high degree of stretchability and areal coverage, and they provide a natural form of strain-limiting behavior, helping to avoid destructive effects of extreme deformations.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Arsenicals / chemistry*
Dimethylpolysiloxanes / chemistry
Electrochemistry / methods
Electronics
Equipment Design
Finite Element Analysis
Gallium / chemistry*
Indium / chemistry*
Microscopy, Electron, Scanning / methods
Optics and Photonics
Phosphines / chemistry*
Photochemistry / methods
Prostheses and Implants
Semiconductors*
Surface Properties
Tensile Strength

Substances

Arsenicals
Dimethylpolysiloxanes
Phosphines
Indium
gallium arsenide
gallium phosphide
baysilon
Gallium
indium phosphide