Anomalous high capacitance in a coaxial single nanowire capacitor

Nat Commun. 2012 Jun 6;3:879. doi: 10.1038/ncomms1833.


Building entire multiple-component devices on single nanowires is a promising strategy for miniaturizing electronic applications. Here we demonstrate a single nanowire capacitor with a coaxial asymmetric Cu-Cu(2)O-C structure, fabricated using a two-step chemical reaction and vapour deposition method. The capacitance measured from a single nanowire device corresponds to ~140 μF cm(-2), exceeding previous reported values for metal-insulator-metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics. Quantum mechanical calculations indicate that this unusually high capacitance may be attributed to a negative quantum capacitance of the dielectric-metal interface, enhanced significantly at the nanoscale.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Electric Capacitance
  • Nanotechnology / methods*
  • Nanowires / chemistry*