Observation of conductance quantization in oxide-based resistive switching memory

Abstract

Conductance quantization phenomena are observed in oxide-based resistive switching memories. These phenomena can be understood by the formation and disruption of atomic-scale conductive filaments in the insulating oxide matrix. The quantum conductance effect can be artificially modulated by controlling the electrical parameters in Set and Reset processes, and can be used for multi-level data storage and help understand and design one-dimensional structures at atomic scales in various materials systems.