For the first time, high quality In(2)Te(3) nanowires were synthesized via a chemical vapor deposition (CVD) method. The synthesized In(2)Te(3) nanowires are single crystals grown along the  direction with a uniform diameter of around 150 nm and an average length of tens of micrometers. Further, two kinds of photodetectors made by 1D In(2)Te(3) nanostructures synthesized by CVD and solvothermal (ST) methods respectively were fabricated. To our best knowledge, this is the first time photoresponse properties of In(2)Te(3) nanowire have been studied. The CVD grown nanowire device shows better performance than the ST device, which demonstrates a fast, reversible, and stable photoresponse and also a broad light detection range from 350 nm to 1090 nm, covering the UV-visible-NIR region. The excellent performance of the In(2)Te(3) nanowire photodetectors will enable significant advancements of the next-generation photodetection and photosensing applications.