A 25 Gbps silicon microring modulator based on an interleaved junction

Opt Express. 2012 Nov 19;20(24):26411-23. doi: 10.1364/OE.20.026411.


A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a V(π)L of 0.76 V-cm and a minimum off-resonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.

Publication types

  • Comparative Study

MeSH terms

  • Artifacts
  • Computer-Aided Design
  • Equipment Design
  • Humans
  • Miniaturization
  • Optical Devices*
  • Semiconductors*
  • Signal Processing, Computer-Assisted / instrumentation*
  • Silicon*
  • Telecommunications / instrumentation*


  • Silicon