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, 21 (4), 4908-16

Photoluminescence Emission and Raman Response of Monolayer MoS₂, MoSe₂, and WSe₂

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Photoluminescence Emission and Raman Response of Monolayer MoS₂, MoSe₂, and WSe₂

Philipp Tonndorf et al. Opt Express.

Abstract

We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.

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