Transit phenomena in organic field-effect transistors through Kelvin-probe force microscopy

Abstract

The temporal evolution of the surface-potential distribution in the channel of pentacene based field-effect transistors is investigated during the charge reversal from the electron to the hole dominated operation. This measurement allows the determination of the carrier density and electric field dependent hole mobility in the sub-threshold regime of the transistor.

Keywords: field-effect mobility; kelvin-probe force microscopy; organic field-effect transistor; transient current.