Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors

Langmuir. 2013 Jun 11;29(23):7143-50. doi: 10.1021/la401356u. Epub 2013 Jun 3.

Abstract

We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semiconductor than is bare polyimde. The field-effect mobility and the on/off current ratio of the ZnO TFT with the YOx/polyimide gate insulator were 0.456 cm(2)/V·s and 2.12 × 10(6), respectively, whereas the ZnO TFT with the polyimide gate insulator was inactive.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Particle Size
  • Resins, Synthetic / chemistry*
  • Solutions
  • Surface Properties
  • Transistors, Electronic*
  • Water / chemistry
  • Yttrium / chemistry*
  • Zinc Oxide / chemistry*

Substances

  • Resins, Synthetic
  • Solutions
  • Water
  • polyimide resin
  • Yttrium
  • Zinc Oxide
  • yttria