Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2

Nano Lett. 2013 Sep 11;13(9):4212-6. doi: 10.1021/nl401916s. Epub 2013 Aug 20.


We report electronic transport measurements of devices based on monolayers and bilayers of the transition-metal dichalcogenide MoS2. Through a combination of in situ vacuum annealing and electrostatic gating we obtained ohmic contact to the MoS2 down to 4 K at high carrier densities. At lower carrier densities, low-temperature four probe transport measurements show a metal-insulator transition in both monolayer and bilayer samples. In the metallic regime, the high-temperature behavior of the mobility showed strong temperature dependence consistent with phonon-dominated transport. At low temperature, intrinsic field-effect mobilities approaching 1000 cm(2)/(V·s) were observed for both monolayer and bilayer devices. Mobilities extracted from Hall effect measurements were several times lower and showed a strong dependence on density, likely caused by screening of charged impurity scattering at higher densities.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Electron Transport
  • Metals / chemistry
  • Molybdenum / chemistry*
  • Serum / chemistry*
  • Temperature


  • Metals
  • Molybdenum