Silicon avalanche photodiode operation and lifetime analysis for small satellites

Opt Express. 2013 Jul 15;21(14):16946-54. doi: 10.1364/OE.21.016946.

Abstract

Silicon avalanche photodiodes (APDs) are sensitive to operating temperature fluctuations and are also susceptible to radiation flux expected in satellite-based quantum experiments. We introduce a low power voltage adjusting mechanism to overcome the effects of in-orbit temperature fluctuations. We also present data on the performance of Si APDs after irradiation (γ-ray and proton beam). Combined with an analysis of expected orbital irradiation, we propose that a Si APD in a 400 km equatorial orbit may operate beyond the lifetime of the satellite.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Equipment Design
  • Equipment Failure Analysis
  • Gamma Rays
  • Photometry / instrumentation*
  • Semiconductors*
  • Silicon / chemistry*
  • Silicon / radiation effects*
  • Spacecraft / instrumentation*

Substances

  • Silicon