Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys

Prineha Narang; Shiyou Chen; Naomi C Coronel; Sheraz Gul; Junko Yano; Lin-Wang Wang; Nathan S Lewis; Harry A Atwater

doi:10.1002/adma.201304473

Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys

Adv Mater. 2014 Feb 26;26(8):1235-41. doi: 10.1002/adma.201304473. Epub 2013 Dec 5.

Authors

Prineha Narang¹, Shiyou Chen, Naomi C Coronel, Sheraz Gul, Junko Yano, Lin-Wang Wang, Nathan S Lewis, Harry A Atwater

Affiliation

¹ T. J. Watson Laboratories of Applied Physics, California Institute of Technology Pasadena, CA, 91125, USA; Joint Center for Artificial Photosynthesis, CA.

PMID: 24307317
DOI: 10.1002/adma.201304473

Abstract

ZnSn1-x Gex N2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2 ) to 3.1 eV (ZnGeN2 ) by control of the Sn/Ge ratio.

Keywords: Zn(Sn,Ge)N2 semiconductor alloys; bandgap; miscibility.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.