Scalable integration of indium zinc oxide/photosensitive-nanowire composite thin-film transistors for transparent multicolor photodetectors array

Xingqiang Liu; Lang Jiang; Xuming Zou; Xiangheng Xiao; Shishang Guo; Changzhong Jiang; Xi Liu; Zhiyong Fan; Weida Hu; Xiaoshuang Chen; Wei Lu; Wenping Hu; Lei Liao

doi:10.1002/adma.201305073

Scalable integration of indium zinc oxide/photosensitive-nanowire composite thin-film transistors for transparent multicolor photodetectors array

Adv Mater. 2014 May;26(18):2919-24. doi: 10.1002/adma.201305073. Epub 2014 Feb 14.

Authors

Xingqiang Liu¹, Lang Jiang, Xuming Zou, Xiangheng Xiao, Shishang Guo, Changzhong Jiang, Xi Liu, Zhiyong Fan, Weida Hu, Xiaoshuang Chen, Wei Lu, Wenping Hu, Lei Liao

Affiliation

¹ Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.

PMID: 24532315
DOI: 10.1002/adma.201305073

Abstract

By incorporating crystalline photosensitive nanowires (NWs), an amorphous InZnO (a-IZO) thin film is designed to be sensitive to the primary colors of light via a facile sol-gel approach. The mobility is also improved. The composite devices leverage the advantages of the transparency of a-IZO with the photosensitivity of CdS NWs.

Keywords: amorphous metal oxides; multicolor photodetectors; transparent materials.

Publication types

Research Support, Non-U.S. Gov't