Germanium quantum dots embedded in N-doping graphene matrix with sponge-like architecture for enhanced performance in lithium-ion batteries

Jinwen Qin; Xia Wang; Minhua Cao; Changwen Hu

doi:10.1002/chem.201402151

Germanium quantum dots embedded in N-doping graphene matrix with sponge-like architecture for enhanced performance in lithium-ion batteries

Chemistry. 2014 Jul 28;20(31):9675-82. doi: 10.1002/chem.201402151. Epub 2014 Jul 7.

Authors

Jinwen Qin¹, Xia Wang, Minhua Cao, Changwen Hu

Affiliation

¹ Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Department of Chemistry, Beijing Institute of Technology, Beijing, 100081 (P.R. China).

PMID: 25043714
DOI: 10.1002/chem.201402151

Abstract

Germanium quantum dots embedded in a nitrogen-doped graphene matrix with a sponge-like architecture (Ge/GN sponge) are prepared through a simple and scalable synthetic method, involving freeze drying to obtain the Ge(OH)4 /graphene oxide (GO) precursor and subsequent heat reduction treatment. Upon application as an anode for the lithium-ion battery (LIB), the Ge/GN sponge exhibits a high discharge capacity compared with previously reported N-doped graphene. The electrode with the as-synthesized Ge/GN sponge can deliver a capacity of 1258 mAh g(-1) even after 50 charge/discharge cycles. This improved electrochemical performance can be attributed to the pore memory effect and highly conductive N-doping GN matrix from the unique sponge-like structure.

Keywords: anodes; doping; germanium; lithiation; lithium-ion batteries; sponges.