Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics

Small. 2015 Jan 14;11(2):208-13. doi: 10.1002/smll.201401872. Epub 2014 Aug 13.

Abstract

Charge trapping layers are formed from different metallic nanocrystals in MoS2 -based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 10(5) and a long retention time of 10 years.

Keywords: MoS2; flash memory; floating gates; metallic nanocrystals; work functions.

Publication types

  • Research Support, Non-U.S. Gov't