Optical properties and band gap of single- and few-layer MoTe2 crystals

Nano Lett. 2014 Nov 12;14(11):6231-6. doi: 10.1021/nl502557g. Epub 2014 Oct 29.

Abstract

Single- and few-layer crystals of exfoliated MoTe2 have been characterized spectroscopically by photoluminescence, Raman scattering, and optical absorption measurements. We find that MoTe2 in the monolayer limit displays strong photoluminescence. On the basis of complementary optical absorption results, we conclude that monolayer MoTe2 is a direct-gap semiconductor with an optical band gap of 1.10 eV. This new monolayer material extends the spectral range of atomically thin direct-gap materials from the visible to the near-infrared.

Keywords: 2D materials; Layered materials; MoTe2; electronic and optical properties; transition metal dichalcogenides.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.