InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate

Opt Express. 2014 Sep 22;22(19):23242-8. doi: 10.1364/OE.22.023242.

Abstract

We report the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on a Ge substrate by molecular beam epitaxy. The QD SLD exhibits a 3 dB emission bandwidth of ~60 nm centered at 1252 nm with output power of 27 mW at room temperature. The 3 dB bandwidth is very stable over the temperature range from 20 °C to 100 °C, which highlights the potential for integration with high performance ICs.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Arsenicals*
  • Equipment Design
  • Gallium*
  • Indium*
  • Light*
  • Nanotechnology / instrumentation*
  • Quantum Dots*

Substances

  • Arsenicals
  • Indium
  • gallium arsenide
  • Gallium
  • indium arsenide