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, 15 (1), 63-8

Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density

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Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density

Prokhor A Alekseev et al. Nano Lett.

Abstract

Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

Keywords: GaAs nanowire; nitridation; photoluminescence; surface passivation.

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