Directed self-assembly of silicon-containing block copolymer thin films

Michael J Maher; Charles T Rettner; Christopher M Bates; Gregory Blachut; Matthew C Carlson; William J Durand; Christopher J Ellison; Daniel P Sanders; Joy Y Cheng; C Grant Willson

doi:10.1021/am508197k

Directed self-assembly of silicon-containing block copolymer thin films

ACS Appl Mater Interfaces. 2015 Feb 11;7(5):3323-8. doi: 10.1021/am508197k. Epub 2015 Jan 30.

Authors

Michael J Maher¹, Charles T Rettner, Christopher M Bates, Gregory Blachut, Matthew C Carlson, William J Durand, Christopher J Ellison, Daniel P Sanders, Joy Y Cheng, C Grant Willson

Affiliation

¹ Department of Chemistry and §McKetta Department of Chemical Engineering, The University of Texas at Austin , Austin, Texas 78712, United States.

PMID: 25594107
DOI: 10.1021/am508197k

Abstract

The directed self-assembly (DSA) of lamella-forming poly(styrene-block-trimethylsilylstyrene) (PS-PTMSS, L0=22 nm) was achieved using a combination of tailored top interfaces and lithographically defined patterned substrates. Chemo- and grapho-epitaxy, using hydrogen silsesquioxane (HSQ) based prepatterns, achieved density multiplications up to 6× and trench space subdivisions up to 7×, respectively. These results establish the compatibility of DSA techniques with a high etch contrast, Si-containing BCP that requires a top coat neutral layer to enable orientation.

Keywords: block copolymers; chemo-epitaxy; directed self-assembly; grapho-epitaxy; lithography; top coats.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.