Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor

Adv Mater. 2015 Jan 27;27(4):759-65. doi: 10.1002/adma.201404544. Epub 2014 Dec 8.


A highly sensitive single-walled carbon nanotube/C60 -based infrared photo-transistor is fabricated with a responsivity of 97.5 A W(-1) and detectivity of 1.17 × 10(9) Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈10(4) with a response time of several milliseconds.

Keywords: carbon nanotubes; fullerene; photodetectors; transistors.