Light-emitting devices based on top-down fabricated GaAs quantum nanodisks

Akio Higo; Takayuki Kiba; Yosuke Tamura; Cedric Thomas; Junichi Takayama; Yunpeng Wang; Hassanet Sodabanlu; Masakazu Sugiyama; Yoshiaki Nakano; Ichiro Yamashita; Akihiro Murayama; Seiji Samukawa

doi:10.1038/srep09371

Light-emitting devices based on top-down fabricated GaAs quantum nanodisks

Sci Rep. 2015 Mar 20:5:9371. doi: 10.1038/srep09371.

Authors

Affiliations

¹ World Premier International Center Initiative Advanced Institute for Materials Research, Tohoku University, 2-1-1 KatahiraAoba-ku, Sendai, Japan.
² 1] Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo, Japan [2] CREST Japan Science and Technology Agency, 5 SanbanchoChiyoda-ku, Tokyo, Japan.
³ 1] Institute of Fluid Science, Tohoku University, 2-1-1 KatahiraAoba-ku, Sendai, Japan [2] CREST Japan Science and Technology Agency, 5 SanbanchoChiyoda-ku, Tokyo, Japan.
⁴ Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo, Japan.
⁵ School of Engineering, The University of Tokyo, 7-3-1 HongoBunkyo-ku, Tokyo 113-8656, Japan.
⁶ Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1, KomabaMeguro-ku, Tokyo, Japan.
⁷ 1] Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Japan [2] CREST Japan Science and Technology Agency, 5 SanbanchoChiyoda-ku, Tokyo, Japan.
⁸ 1] World Premier International Center Initiative Advanced Institute for Materials Research, Tohoku University, 2-1-1 KatahiraAoba-ku, Sendai, Japan [2] Institute of Fluid Science, Tohoku University, 2-1-1 KatahiraAoba-ku, Sendai, Japan [3] CREST Japan Science and Technology Agency, 5 SanbanchoChiyoda-ku, Tokyo, Japan.

Abstract

Quantum dots photonic devices based on the III-V compound semiconductor technology offer low power consumption, temperature stability, and high-speed modulation. We fabricated GaAs nanodisks (NDs) of sub-20-nm diameters by a top-down process using a biotemplate and neutral beam etching (NBE). The GaAs NDs were embedded in an AlGaAs barrier regrown by metalorganic vapor phase epitaxy (MOVPE). The temperature dependence of photoluminescence emission energies and the transient behavior were strongly affected by the quantum confinement effects of the embedded NDs. Therefore, the quantum levels of the NDs may be tuned by controlling their dimensions. We combined NBE and MOVPE in a high-throughput process compatible with industrial production systems to produce GaAs NDs with tunable optical characteristics. ND light emitting diode exhibited a narrow spectral width of 38 nm of high-intensity emission as a result of small deviation of ND sizes and superior crystallographic quality of the etched GaAs/AlGaAs layer.