Flexography-Printed In2 O3 Semiconductor Layers for High-Mobility Thin-Film Transistors on Flexible Plastic Substrate

Adv Mater. 2015 Nov 25;27(44):7168-75. doi: 10.1002/adma.201502569. Epub 2015 Oct 12.

Abstract

Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm(2) V(-1) s(-1) ) nanocrystalline In2 O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2 O3 semiconductor layers from precursor-solution is performed on a Al2 O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation.

Keywords: flexographic printing; metal oxides; post-contact-annealing; printed electronics; thin-film transistors.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Indium / chemistry*
  • Ink
  • Mechanical Phenomena*
  • Plastics / chemistry*
  • Printing / instrumentation*
  • Temperature
  • Transistors, Electronic*

Substances

  • Plastics
  • Indium
  • indium oxide